Industry
Semiconductor
Inspection of
a silicium wafer
Elimination of reflections and uniform illumination
of micro-structures of a silicon wafer
Using L.E.S.S. light, the user benefits from uniform white light (5400°K) illumination.
Image of a wafer lit
by an entry-level LED ringlight
This photo was taken with an entry-level LED ring at a working distance of 100 mm. Large shadow areas are present and unwanted reflections appear on the wafer surface. The different areas are not evenly illuminated, such that some engravings are not observable.
Image of a wafer lit
by L.E.S.S. ringlight
This photo was taken with L.E.S.S. ringlight (BF-5400) at a working distance of 100 mm.
The surface structure is entirely visible. No shadow areas are present on the microstructures such that all details are observed. The uniformity of the illumination results in sharp, well-defined images, leading to a faster, more accurate and more reliable inspection of the sample.
Problematic
Using standard LED illuminations to inspect a silicium wafer creates unwanted reflections on the surface of the sample that reduces the image quality.
Our solution
Using L.E.S.S. light, the user benefits from uniform illumination with neutral white light (5400°).
The light of the L.E.S.S. brightfield illumination hit the sample from the top with optimum intensity and no heat dissipation.
Problematic
Using standard LED illuminations to inspect a silicium wafer creates unwanted reflections on the surface of the sample that reduces the image quality.
Our solution
Using L.E.S.S. light, the user benefits from uniform illumination with neutral white light (5400°).
The light of the L.E.S.S. brightfield illumination hit the sample from the top with optimum intensity and no heat dissipation.
